Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793553 | Journal of Crystal Growth | 2009 | 5 Pages |
Abstract
Wurtzite structure ZnO films doped with ~2 at% Cu were deposited at substrate temperatures (Ts) from 350 to 600 °C by helicon magnetron sputtering. All the films exhibited room-temperature (RT) ferromagnetism (FM) and the maximum saturation magnetization (Ms) was 1.2 emu/cm3 (~0.15 μB/Cu). Cu ions were mainly in a divalent state as identified by X-ray photoelectron spectroscopy. FM tended to increase with decreasing Ts, and vacuum annealing enhanced the Ms. These results suggested that oxygen vacancies and/or zinc interstitials might contribute to the ferromagnetic performance. Thus, the observed FM was explained in terms of the defect related mechanism.
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Condensed Matter Physics
Authors
Fan-Yong Ran, Masaki Tanemura, Yasuhiko Hayashi, Takehiko Hihara,