Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793563 | Journal of Crystal Growth | 2009 | 7 Pages |
Abstract
We report the synthesis and characterization of high-quality highly ã1 0 0ã oriented nanocrystalline diamond (NCD) films consisting of {1 0 0} nano-facets with a high growth rate of 2.6 μm/h. The NCD samples were grown on large (1 0 0) silicon wafers of 5.08 cm in diameter by employing CH4/H2/O2/N2 chemistries without the aid of bias for orientation, microwave power 3 kW and the substrate temperature about 700 °C using a 5 kW-type high-power microwave plasma chemical vapor deposition (CVD) system. The strong ã1 0 0ã preferred orientation is unambiguously demonstrated by a detailed crystallographic texture analysis and the conventional X-ray diffraction. Moreover, a detailed morphological characterization by the high-resolution scanning electron microscopy (SEM) and the atomic force microscopy (AFM), reveal that the growth surface consists of square (1 0 0) facets with an average size of about 60 nm and has a cylindrical microstructure. We demonstrate that the root-mean-square surface roughness as low as â¼15 nm, measured by AFM on 1 μm2 scan areas, can be obtained even for considerably thick (76 μm) films. The high quality of these films is confirmed by the Raman and Fourier-transformer infrared spectra. The high-quality smooth ã1 0 0ã-oriented {1 0 0}-faceted NCD films may have high potential in mechanical, tribological and micro-electromechanical system (MEMS) applications.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
C.J. Tang, S.M.S. Pereira, A.J.S. Fernandes, A.J. Neves, J. Grácio, I.K. Bdikin, M.R. Soares, L.S. Fu, L.P. Gu, A.L. Kholkin, M.C. Carmo,