Epitaxial growth of ferromagnetic δδ-phase manganese gallium on semiconducting scandium nitride (0 0 1)

Ferromagnetic δδ-phase manganese gallium layers with Mn/(Mn+Ga)=60%Mn/(Mn+Ga)=60% have been successfully grown on ScN(0 0 1) by molecular beam epitaxy, expanding possibilities for ferromagnetic layers on nitride semiconductors. The in-plane   epitaxial relationship of manganese gallium with respect to scandium nitride is determined to be [100]MnGa//[110]ScN and [110]MnGa//[100]ScN. Vibrating sample magnetometry measurements indicate out-of-plane   magnetization of the film, suggesting strong magnetic anisotropy along the manganese gallium cc-axis.