Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793579 | Journal of Crystal Growth | 2009 | 4 Pages |
Abstract
The chemical state of nitrogen, aluminum, oxygen and zinc in Al–N co-doped p-type ZnO thin films was investigated by X-ray photoelectron spectroscopy (XPS). N1s peak were detected in both the two p-type ZnO thin films, showing two components. The higher binding energy peak may be due to the Al–NO–H species, and the lower one perhaps derive from the (NH2)− cluster for the ammonia introduction. These two peaks both contribute to the p-type behavior in the ZnO films. A symmetry 74.4 eV binding energy in Al2p3/2 photoelectron peaks revealed an Al–N bonding state, a key factor to the co-doping method.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
G.D. Yuan, Z.Z. Ye, J.Y. Huang, Z.P. Zhu, C.L. Perkins, S.B. Zhang,