| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1793628 | Journal of Crystal Growth | 2009 | 4 Pages |
Abstract
Large indium-doped detector grade (52 mm diameter, 1.1 kg) Cd0.9Zn0.1Te crystals have been grown by THM technique from Te-rich solution. The as-grown crystals showed the dark resistivity of 2×1010 Ω cm and mobility life time product of electrons of 4–7×10−3 cm2/V. A quasi-hemispherical configuration was used in the device fabrication, which provides an economic way of electron only detector configuration. A resolution of 2% was achieved for the 137Cs 662 keV gamma line at room temperature for the as-grown THM samples.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
U.N. Roy, A. Gueorguiev, S. Weiller, J. Stein,