| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1793667 | Journal of Crystal Growth | 2009 | 4 Pages |
Abstract
The structural and surface properties of AlInGaN quaternary films grown at different temperatures on GaN templates by metalorganic chemical vapor deposition are investigated. Formation of two quaternary layers is confirmed and the difference between them is pronounced when the growth temperature is increased. The surface is featured with V-shaped pits and cracks, whose characteristics are further found to be strongly dependent on the growth temperature of AlInGaN layers. The two-layer structure is interpreted by taking into account of the strain status in AlInGaN layers.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
J.Z. Shang, B.P. Zhang, M.H. Mao, L.E. Cai, J.Y. Zhang, Z.L. Fang, B.L. Liu, J.Z. Yu, Q.M. Wang, K. Kusakabe, K. Ohkawa,