Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793749 | Journal of Crystal Growth | 2009 | 5 Pages |
Abstract
The growth of SiGe crystals on a V-groove patterned Si(1 1 0) substrate and the fabrication of pMOSFET using this material were carried out. The crystalline and surface morphologies were significantly improved compared to those of a film grown on a planar Si(1 1 0) substrate. A self-organized selective growth was observed, which was attributed to the local enhancement of the sticking coefficient. A significant enhancement of drain conductance was accomplished, which was attributed to the lower effective mass of strained SiGe crystal which became effective by the improvement of crystalline morphology.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Keisuke Arimoto, Genki Kawaguchi, Kana Shimizu, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami, Kazuo Nakajima, Kentarou Sawano, Yasuhiro Shiraki,