| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1793777 | Journal of Crystal Growth | 2009 | 5 Pages |
Abstract
We report the OMVPE growth and characterization of InAsSb/InAs strain balanced multiple quantum wells lattice-matched to GaSb substrates for potential application as mid-infrared detectors for wavelengths beyond 4 μmμm. Detailed transmission electron microscopy measurements were performed to evaluate the degree of Ga and Sb intermixing at the GaSb/InAsSb and InAs/InAsSb interfaces. Photoluminescence emission up to 5 μmμm was observed for superlattice structures with only 15% antimony. The dependence of PL on wavelength is red shifted compared to expectations based on type I band alignment.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
D. Lackner, O.J. Pitts, S. Najmi, P. Sandhu, K.L. Kavanagh, A. Yang, M. Steger, M.L.W. Thewalt, Y. Wang, D.W. McComb, C.R. Bolognesi, S.P. Watkins,