Article ID Journal Published Year Pages File Type
1793787 Journal of Crystal Growth 2009 4 Pages PDF
Abstract

High-quality ZnMgO films were grown by the radio frequency (RF) magnetron sputtering technique in pure oxygen ambient. Single-crystal films were obtained, when the Mg concentration was Zn0.87Mg0.13O or lower in the case of ZnMgO/Al2O3 and when it was Zn0.65Mg0.35O or lower in the case of ZnMgO/ZnO. Polycrystalline films were obtained when the growth temperature was lower than 500 °C, regardless of the Mg concentration. Position of the photoluminescence (PL) ultraviolet (UV) peak of the ZnMgO film shifted with the addition of Mg, from 3.33 eV (ZnO) to 3.51 eV (Zn0.87Mg0.13O) and 3.70 eV (Zn0.65Mg0.35O). It was also observed that growth of the ZnMgO films at higher temperature resulted in higher band-gap energy. It was proposed that this phenomenon is because concentration of the substitutional Mg atoms occupying Zn site is increased as the growth temperature increases.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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