Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793791 | Journal of Crystal Growth | 2009 | 4 Pages |
Abstract
InGaAsSb layers nearly lattice-matched to InP were grown by metalorganic molecular beam epitaxy using tris-dimethylaminoantimony (TDMASb). Secondary-ion mass spectroscopy measurements revealed that TDMASb is useful not only as an Sb source but also as an additive that reduces the incorporation of C into the film from group-III metalorganic sources. In the room-temperature photoluminescence spectrum, the incorporation of Sb into InGaAs shifted the peak wavelength from 1.66 to 1.75 μm and, simultaneously, the peak intensity of InGaAsSb became more than twice that of InGaAs.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Manabu Mitsuhara, Tomonari Sato, Norio Yamamoto, Hideki Fukano, Yasuhiro Kondo,