Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793834 | Journal of Crystal Growth | 2010 | 5 Pages |
Abstract
Bat-like InN nanostructures were successfully grown on GaN/AlN/Si(1 1 1) substrates using molecular beam epitaxy method. The initial growth behavior and structural properties of InN nanobats were studied from a nanostructural point of view. During the initial stage of the growth, a nucleation process and a shape-decision process took place in which 3-dimensional (3-D) GaN nanoislands and nanorods were formed on AlN initiation layer/Si substrate. This was followed by the independent growth of 3-D InN nanoislands and nanorods. Lateral expansion of the InN nanobats was observed, and the diameter of InN bats then reached a fixed value.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Y.H. Kim, W.S. Yun, H. Ruh, C.S. Kim, J.W. Kim, Y.H. Shin, M.D. Kim, J.E. Oh,