| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1793855 | Journal of Crystal Growth | 2008 | 5 Pages |
Abstract
Crystalline GaSb films were deposited using the tailor-made single-source precursor [t-Bu2GaSbEt2] in a specifically designed MOCVD reactor under HV conditions at low temperatures. In addition, tetraethyldistibine Sb2Et4 has been successfully used as the precursor for the deposition of crystalline antimony films at low temperatures.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
Daniella Schuchmann, Marcel Schwartz, Stephan Schulz, Andreas Seemayer, Klaus Wandelt,