| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1793856 | Journal of Crystal Growth | 2008 | 4 Pages |
Abstract
The vapor pressure of two germanium precursors tetrakis(methoxy)germanium (Ge(OCH3)4, CASRN 992-91-6) and tetrakis(ethoxy)germanium (Ge(OC2H5)4, CASRN 14165-55-0) was determined using a static method in the temperature range 259–303 K. The experimental vapor pressure data were fit with the Antoine equation. The mass spectra before and after degassing by vacuum distillation at low temperature are also reported and discussed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
J. Pangrác, M. Fulem, E. Hulicius, K. Melichar, T. Šimeček, K. Růžička, P. Morávek, V. Růžička, S.A. Rushworth,