III–V epitaxy on Si for photonics applications

Structural-defect-free growth of III–V–N alloys on a Si substrate has been established, which was based on lattice-matching. The electric conductivity and photoluminescence properties of a basic III–V–N alloy of GaPN were investigated, which were grown by molecular beam epitaxy (MBE) and MOVPE. The carrier concentration was controlled by S and Mg doping for n and p types, respectively. Specific features were observed in n-GaPN. Photoluminescence intensity was increased by rapid thermal annealing (RTA). These characteristics relate to N-related defects. InGaPN/GaPN LEDs and Si MOSFETs were fabricated in the Si/InGaPN/GaPN DH layers grown on the Si substrate with structural-defect-free growth process. The results lead to monolithic optoelectronic integrated circuits (OEICs). Some of the possible applications are described. The key issues for realizing the monolithic OEICs are the reduction of point defects of III–V–N layers and the growth of III–V compounds with high light emission efficiency.