| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1793886 | Journal of Crystal Growth | 2008 | 4 Pages |
Abstract
In this article, the GaAsSb/GaAs quantum wells (QWs) grown at different temperatures were studied. The growth rate increases and the Sb composition decreases as the growth temperature increases. The photoluminescence properties of GaAsSb/GaAs QWs were measured at room temperature. The samples grown at higher temperature possess lower photoluminescence intensity and larger full-width at half-maximum (FWHM), which means that the Sb segregation effects become more significant at high growth temperature.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Y.K. Su, C.T. Wan, R.W. Chuang, C.Y. Huang, W.C. Chen, Y.S. Wang, H.C. Yu,