Growth of Ga-doped ZnO by MOVPE using diisopropylzinc and tertiary butanol

Gallium-doped ZnO thin films were grown on quartz substrates by metalorganic vapor phase epitaxy using diisopropylzinc (Di-PrZn) as a zinc source and tertiary butanol (t-BuOH) as an oxygen source. Triethylgallium (TEG) was used as a gallium source. A vertical-type reactor with a high-speed rotating disk and a conventional horizontal-type reactor were used in these experiments. The growth temperature was 350 °C, and the growth pressure was 76 Torr. The range of Ga flow ratios [TEG]/([TEG]+[Di-PrZn]) was between 0% and 11%. The thin film properties were evaluated by Raman scattering, X-ray diffraction, Hall effect and transmittance measurements. The thin films grown by using these source materials exhibited a low resistivity up to 2.21×10−4 Ω cm, and a high optical transparency over 80%.