Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1793928 | Journal of Crystal Growth | 2008 | 5 Pages |
Abstract
Polar and non-polar ZnO films were synthesized on different planecuts (a-, c- and R-planes) of Al2O3 substrates by metal-organic vapor-phase epitaxy. Polar ZnO films were obtained on c- and a-Al2O3 substrates whereas non-polar ZnO films were obtained on R-Al2O3 substrates. In spite of generally better crystalline quality and optical properties of polar ZnO films, there are two characteristic photoluminescence peaks detected in the non-polar material only. The peaks (at 3.048 and 2.966 eV) are tentatively assigned to electron transitions involving zinc vacancy and oxygen interstitial defect states, respectively.
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Authors
J.J. Zhu, T. Aaltonen, V. Venkatachalapathy, A. Galeckas, A. Yu. Kuznetsov,