| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1793930 | Journal of Crystal Growth | 2008 | 4 Pages |
Abstract
We produced Mn-doped InAsP in metal-organic vapor phase epitaxy (MOVPE) grown InAsP. Good quality samples could be only prepared by heteroepitaxy on InP(0 0 1), while layers on GaAs showed very little smoothing after the initial roughening. The samples were characterized by X-ray diffraction, photoluminescence and Hall effect measurements. By varying the As content from 0% to 70% the ionization energy of the Mn-acceptor level varied from 220 to <30meV and drops into the valence band for higher concentrations.
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
M. Pristovsek, Ch. Meißner, M. Kneissl, R. Jakomin, S. Vantaggio, L. Tarricone,