| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1793940 | Journal of Crystal Growth | 2008 | 4 Pages |
Abstract
Wideband wavelength electroluminescence (EL) more than 400Â nm was obtained in self-assembled Stranski-Krastanov (S-K) InAs/InP quantum dots (QDs) grown by selective area low-pressure metal-organic vapor-phase epitaxy (MOVPE). We used two techniques to control the EL peak spectrum in order to obtain the wideband emission spectrum of the device. One is selective area growth using a SiO2 narrow 16-stripe mask array pattern, and the other is a double-cap procedure in the growth of the QDs layer to change the height of QDs layer by layer.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Y. Saito, T. Okawa, M. Akaishi, K. Shimomura,