| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1793944 | Journal of Crystal Growth | 2008 | 4 Pages |
Abstract
We demonstrate the growth of InP/GaInP quantum dots on a low density InAs/GaAs island seed layer (107cm-2) by metal-organic vapor phase epitaxy. The strain produced by the underlying InAs islands results in a distinct bimodal size distribution of the InP/GaInP quantum dot layer where large dome shaped structures and small quantum dots could be observed using atomic force microscopy. Using μ-photoluminescence only luminescence from the small high energetic InP-QDs could be recorded with emission linewidths of around 140μeV. Autocorrelation measurements confirmed the zero dimensionality of the InP quantum dots.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
R. RoÃbach, W.-M. Schulz, M. Reischle, G.J. Beirne, C. Hermannstädter, M. Jetter, P. Michler,