| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1793951 | Journal of Crystal Growth | 2008 | 4 Pages |
Abstract
We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Mattias Jeppsson, Kimberly A. Dick, Henrik A. Nilsson, Niklas Sköld, Jakob B. Wagner, Philippe Caroff, Lars-Erik Wernersson,