Improved dielectric properties of (1Â 1Â 0)-preferred (Pb, La) (Zr, Sn, Ti)O3 antiferroelectric thin films on metalorganic decomposition-derived LaNiO3 buffer layer

In the present investigation, LaNiO3 (LNO) perovskite thin films were firstly deposited on Pt(1 1 1)/Ti/SiO2/Si substrates through the metalorganic decomposition technique, then (Pb0.97La0.02)(Zr0.87Sn0.10Ti0.03)O3 (PLZST 2/87/10/3) antiferroelectric thin films were subsequently grown on Pt(1 1 1)/Ti/SiO2/Si and LNO-buffered Pt(1 1 1)/Ti/SiO2/Si substrates via the sol-gel method, respectively. The effect of LNO buffer layer on the microstructure and electrical properties of PLZST 2/87/10/3 antiferroelectric thin films were studied in detail. XRD patterns and SEM pictures indicated that PLZST 2/87/10/3 antiferroelectric thin films grown on LNO buffer layer displayed a (1 1 0)-preferred orientation and had a uniform surface structure. The results of dielectric measurements illustrated that PLZST 2/87/10/3 antiferroelectric thin films on LNO-buffered Pt(1 1 1)/Ti/SiO2/Si substrates had improved dielectric properties.