| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1794096 | Journal of Crystal Growth | 2008 | 5 Pages |
Abstract
We report on Li-doped p-type Zn0.9Mg0.1O thin films grown by pulsed laser deposition. An optimal p-type conductivity is achieved at the substrate temperature of 550 °C, namely a resistivity of 45.4 Ω cm, a Hall mobility of 0.302 cm2 V−1 s−1, and a hole concentration of 4.55×1017 cm−3. Additionally, the p-type conductivity is stable over 5 months. From temperature-dependent photoluminescence, the energy level of LiZn acceptor is determined to be 167 meV above the valence band maximum.
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Authors
X.H. Pan, Z.Z. Ye, J.Y. Huang, Y.J. Zeng, H.P. He, X.Q. Gu, L.P. Zhu, B.H. Zhao,