Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1794129 | Journal of Crystal Growth | 2008 | 6 Pages |
Abstract
We successfully demonstrated epitaxial growth of semiconductor (BaSi2)/metal(CoSi2) Schottky-barrier structures on Si(1Â 1Â 1), for the first time, by molecular beam epitaxy (MBE). The interface between the CoSi2 and BaSi2 layers was found to be sharp from transmission electron microscopy (TEM) observations. The current-voltage characteristics measured at room temperature showed clear rectifying properties. When positive bias was applied to the CoSi2 layer with respect to the BaSi2 layer, the current increased exponentially. Electron diffraction patterns obtained using reflection high-energy electron diffraction (RHEED) and TEM are discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Takashi Suemasu, Masato Sasase, Yoshitake Ichikawa, Michitaka Kobayashi, Dai Tsukada,