Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1794145 | Journal of Crystal Growth | 2008 | 4 Pages |
Abstract
A-plane InN film has been grown on r-plane sapphire substrate by MOCVD without any buffer. X-ray Ï/2θ scan confirms that only wurtzite-type InN was grown. The in-plane orientation relationship between a-plane InN and r-plane sapphire is ã0 0 0 1ãInN//[1¯ 1 0 1]sapphire and [1¯ 1 0 0]InN//[1 1 2¯ 0]sapphire deduced from selected area diffraction. Atomic force microscopy reveals that no stripe features appear on surface of the a-plane InN film, which is different from that of a-plane GaN grown on r-plane sapphire where stripes along [0 0 0 1] direction appear on the surface. The difference originates from the different growth mode of InN and GaN. In addition, photoluminescence and absorption spectra show that our a-plane InN has a narrow band gap of 0.7 eV, which is similar to that of c-plane InN film grown by the same system.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
X.L. Zhu, L.W. Guo, M.Z. Peng, B.H. Ge, J. Zhang, G.J. Ding, H.Q. Jia, H. Chen, J.M. Zhou,