Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1794150 | Journal of Crystal Growth | 2008 | 6 Pages |
Abstract
The growth of GdxHg1âxSe crystals by the vertical Bridgman method was studied in the composition range 0⩽x⩽0.1. The structural and electronic properties of GdxHg1âxSe crystals were investigated as a function of composition. It was found that an increase in gadolinium content up to x=0.01 results in a decrease of structural defects and an increase in electron mobility up to the maximum value of μ77â2.8Ã105 cm2/V s. Structural defects start to increase at x>0.01, and the formation of Gd2Se3 amorphous phase takes place at x>0.03. On the base of the electron-spin resonance investigation, it was shown that the Gd incorporates into the HgSe host in Gd3+ charge state at the concentration x⩽0.01.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S.Yu. Paranchych, M.D. Andriychuk, N.V. Sochinskii, C. Reig, V. Muñoz,