Article ID Journal Published Year Pages File Type
1794169 Journal of Crystal Growth 2008 7 Pages PDF
Abstract
Sr4Ru2O9 thin films have been grown by pulsed laser deposition (PLD) on Si [1 0 0] substrates, using a Sr2RuO4 target and high oxygen pressures. The growth conditions for a single-phased film were a substrate temperature of 700 °C, and an oxygen pressure of 300 mTorr. An oxygen pressure of 50 mTorr and a substrate temperature of 700 °C lead to the occurrence of nanograins of SrRuO3 at the surface of the Sr4Ru2O9 grains. The Sr4Ru2O9 growth is columnar, with a strong tendency to (0 0 ℓ) texture. Planar defects parallel to the (h 0 0) and (0 k 0) planes are presented. The occurrence of these defects can be explained by an ordering of ruthenium atoms in the Sr4Ru2O9 structure.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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