| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1794187 | Journal of Crystal Growth | 2009 | 8 Pages |
Abstract
We present recent progress in growth of nitride-based laser diodes (LDs) and efficient light-emitting diodes (LEDs) made by plasma-assisted MBE (PAMBE). This technology is ammonia free, and nitrogen for growth is activated by RF plasma source from nitrogen molecules. The recent demonstration of CW blue InGaN LDs has opened a new perspective for PAMBE in optoelectronics. The LDs were fabricated on low threading dislocation density (TDD) bulk GaN substrates at low growth temperatures 600–700 °C. In this work, we describe the nitride growth fundamentals, the influence of the TDD on the layer morphology, the peculiarities of InGaN growth as well as properties of LEDs and LDs made by PAMBE.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
C. Skierbiszewski, Z.R. Wasilewski, I. Grzegory, S. Porowski,