GaInAsN growth studies for InP-based long-wavelength laser applications (TUA3-3)

Growth studies of Ga1−xInxAs1−yNy quantum wells with indium contents covering the full compositional range (xIn=0…1) have been performed using a gas-source MBE and a valved nitrogen plasma source manufactured by the company ADDON. By using GaAs- and InP- as well as InAs substrates, differently strained GaInAsN-layers were produced, offering a complete overview of the relative bandgap shrinkage with respect to nitrogen-free GaInAs structures, after 1% nitrogen is incorporated. We have shown that this relative bandgap shrinkage depends on the absolute value of indium content of the GaInAs host matrix. As a result a new parameter ε was defined describing the relative bandgap shrinkage per percent incorporated nitrogen. When plotting this parameter over the complete range of indium content, a nearly linear decrease occurs.