Article ID Journal Published Year Pages File Type
1794213 Journal of Crystal Growth 2009 6 Pages PDF
Abstract

We demonstrated an appropriate growth procedure for GaAsN/GaP(N) single quantum wells (SQWs) with abrupt heterointerfaces in solid-source molecular beam epitaxy able to prevent the formation of unwanted As/P intermixing layers caused by residual As pressure. It was clarified that a GaP capping layer, grown on the top of the GaAsN SQW, was effective in avoiding the P/As exchange reaction on the GaAsN SQW surface. In fact, gettering by Ga was effective in removing the residual As2 pressure, thus preventing the formation of the unwanted As/P intermixing layer. Then, we suggested that a GaAs0.965N0.035/GaP0.98N0.02 SQW has a type-I band alignment with the conduction band offset larger than 300 meV. Finally, we fabricated a GaAs0.965N0.035/GaP SQW light-emitting diodes (LEDs) on the Si substrate. The GaAs0.965N0.035/GaP SQW LED emitted in the infrared region at a wavelength at 860 nm. Therefore, the GaAsN/GaP(N) SQW can be used as a direct-transition active layer in light-emitting devices on Si, to realize monolithic optoelectronic integrated circuits and systems operating in the wavelength range around 850 nm.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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