Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1794219 | Journal of Crystal Growth | 2009 | 4 Pages |
Abstract
We have studied the structural and optical properties of 10 stacked layers of self-organized In0.4Ga0.6As quantum dots (QDs) grown on GaAs (3Â 1Â 1)B substrates by atomic hydrogen-assisted radio frequency (RF)-molecular beam epitaxy. A 40Â nm-thick GaN0.007As0.993 dilute nitride, which is used to cover each QD layer acts as a strain-compensation layer (SCL). The density of strain-compensated In0.4Ga0.6As QDs on GaAs (3Â 1Â 1)B can be controlled between 2Ã1010 and 1Ã1011Â cmâ2 by simply changing the growth temperature. Closely spaced In0.4Ga0.6As QDs on GaAs (3Â 1Â 1)B shows an ordered structure, in which we observe clear peaks in the two-dimensional fast Fourier transformation image. The temperature dependence of photoluminescence (PL) spectra shows a narrower linewidth over the whole temperature range 30â300Â K for strain-compensated QDs owing to better uniformity in the QD size.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Ryuji Oshima, Yasushi Shoji, Ayami Takata, Yoshitaka Okada,