| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1794234 | Journal of Crystal Growth | 2009 | 4 Pages |
Abstract
We investigated the self-assembly of GaAs/AlGaAs quantum dots (QDs) on GaAs (3Â 1Â 1)A substrates by droplet epitaxy. High-density Ga droplets were formed on the (3Â 1Â 1)A surfaces due to the short surface migration distance of Ga atoms. The maximum area density exceeded 1011Â /cm2. These Ga droplets were crystallized into dot-shaped nanostructures (QDs) even by the irradiation of low As4 flux intensity. The capped GaAs QDs exhibited efficient, narrow PL emission at 5Â K, indicating their high quality and uniformity.
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
T. Mano, T. Kuroda, K. Mitsuishi, T. Noda, K. Sakoda,