Fabrication of In0.15Ga0.85As nanohloes on GaAs by droplet molecular beam epitaxy

This article reports on the fabrication of self-assembled In0.15Ga0.85As nanoholes on GaAs(1 0 0)substrates grown by droplet epitaxy using molecular beam epitaxy. The effects of growth interruption time and substrate temperature were investigated. The surface morphology of In0.15Ga0.85As nanoholes were examined by atomic force microscopy. The results show the dependence of density, depth, and width of nanoholes on the growth interruption time and substrate temperature. This growth technique is simple and flexible. It does not require additional complicated substrate processing and has a potential in developing quantum dots and quantum dot molecules for quantum computation applications.