Growth of GaInNAs and 1.3 μm edge emitting lasers by molecular beam epitaxy

We show that the use of a low growth rate combined with low N flux and RF power during molecular beam epitaxy (MBE) growth of dilute nitrides can efficiently enhance N incorporation while retaining good optical quality. A maximum light emission wavelength of 1.44 and 1.71 μm has been obtained at 300 K from GaNAs and GaInNAs quantum wells, respectively. We demonstrate high-performance 1.3 μm GaInNAs multiple quantum well edge emitting lasers with record low threshold current densities, a 3 dB modulation bandwidth of 17 GHz at 300 K and capability of being modulated at 10 Gbit/s up to 110 °C without extra coolers. Our results show that MBE is an epitaxial technology suitable for the growth of dilute nitride materials and devices.