| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1794325 | Journal of Crystal Growth | 2008 | 6 Pages |
Abstract
We present the results of a comprehensive study of distribution of zinc, resistivity, and photosensitivity in a Cd1−xZnxTe ingot grown by the vertical Bridgman method. We used several complementary methods, viz., glow discharge mass spectroscopy, photoluminescence, resistivity-, and photosensitivity-mapping, along with photo-induced current transient spectroscopy to characterize the material. We identified electronic levels in the bandgap responsible for compensation, recombination, and photosensitivity.
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Condensed Matter Physics
Authors
V. Babentsov, J. Franc, A. Fauler, M. Fiederle, R.B. James,