Chemical and physical characterization of LaNiO3 thin films deposited by sputtering for top and bottom electrodes in ferroelectric structure

LaNiO3 thin films were deposited by sputtering on Si/SiO2 substrates with and without heating of the substrate holder. Cold-deposited films were crystallized by conventional annealing and the study revealed an optimal annealing temperature of 700 °C with a stoichiometric La/Ni ratio, a main (1 1 0) orientation and a resistivity value of 4.10−6 Ω m. In-situ crystallized LaNiO3 thin films were optimal for a deposition at 450 °C with 20% oxygen with a La/Ni ratio of 1.25. The main orientation was (1 0 0) and resistivity was 2.5×10−5 Ω m. This value could be improved with the help of a conventional annealing, down to 9×10−6 Ω m. The use of such a material is very much adapted for top and bottom electrodes in ferroelectric structures.