Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1794365 | Journal of Crystal Growth | 2009 | 6 Pages |
Abstract
We report on the heteroepitaxial growth of thin films of rocksalt GdN on c-plane (0 0 0 1) wurtzite GaN by molecular beam epitaxy (MBE) using either an N2 plasma or NH3 as the nitrogen source. In both cases, epitaxial films with fully oriented GdN (1 1 1)∥GaN (0 0 0 1) were deposited as demonstrated by θ–2θ X-ray diffraction. φ scans of GdN peaks demonstrate 6-fold symmetry along the growth axis implying the presence of two 3-fold-symmetric GdN (1 1 1) crystal variants in-plane. Electrical transport and magnetometry measurements on films grown using N2 plasma show that these GdN films are ferromagnetic below TC=70 K and degenerately doped or metallic from 10 to 300 K with magnetotransport signatures associated with TC.
Keywords
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
M.A. Scarpulla, C.S. Gallinat, S. Mack, J.S. Speck, A.C. Gossard,