Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1794431 | Journal of Crystal Growth | 2008 | 4 Pages |
Abstract
We report the observation of two emissions from the (0Â 0Â 0Â 1) face of GaN grown by the acidic ammonothermal method, which appears rather unusual. Excitonic emission at 3.357Â eV (called Y4) by photoluminescence was observed which is possibly due to an exciton bound to neutral donors related to structural defects of GaN. Deep level luminescence at 1.93Â eV was also observed, which had two transition possibilities of a simple two-level transition and donor-acceptor pairs.
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Katsushi Fujii, Gakuyo Fujimoto, Takenari Goto, Takafumi Yao, Yuji Kagamitani, Naruhiro Hoshino, Dirk Ehrentraut, Tsuguo Fukuda,