Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1794463 | Journal of Crystal Growth | 2009 | 5 Pages |
Abstract
SbxBi1âx alloy single crystals with Bi composition up to 18Â at% were grown by the Czochralski method. The effective distribution coefficients of Bi were calculated and used for the growth of Sb-Bi single crystals. The influence of the pulling rate and Bi composition on dislocation density, composition distribution and lattice parameter c in the bulk was studied. Sb-Bi gradient single crystals with a varied Bi composition from 2 to 18Â at% have been grown by a modified Czochralski method with Bi feed. The concentration profiles and the lattice parameter c in the grown Sb-Bi gradient single crystals were measured.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
G.N. Kozhemyakin, D.V. Lutskiy, M.A. Rom, P.V. Mateychenko,