Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1794504 | Journal of Crystal Growth | 2008 | 5 Pages |
Abstract
Highly transparent and conducting thin films of ZnO–In2O3 were deposited using pulsed laser deposition (PLD) technique. The effect of composition and growth temperature on structural, electrical, and optical properties was studied. The lowest resistivity of 2.11×10−4 Ω cm and high transparency (∼80%) was obtained for the film having 5% In2O3 in ZnO. The band gap of the films depends on doping level and varies from 3.37 to 3.95 eV.
Related Topics
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Condensed Matter Physics
Authors
R.K. Gupta, K. Ghosh, R. Patel, S.R. Mishra, P.K. Kahol,