Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1794505 | Journal of Crystal Growth | 2008 | 5 Pages |
Abstract
Zinc oxide (ZnO) films were grown at 600 °C on (0 0 0 1) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as source precursors. In some cases, low-temperature (LT) ZnO buffer layers were employed along with post-annealing or buffer-layer annealing for the optimization of ZnO growth. Based on the θ to 2θ X-ray diffraction (XRD) data, the as-grown ZnO films exhibit a preferred orientation with ã0 0 0 1ãZnO being parallel to the ã0 0 0 1ãsapphire. Both post-annealing and buffer-layer annealing were found to be very helpful for improving the optical properties of the ZnO films. Room temperature (RT) photoluminescence (PL) spectra of the ZnO films show strong near-band edge (NBE) emissions with completely quenched defect luminescence. The best ZnO films were achieved with a sharp neutral donor excitonic (DoX) emission as well as phonon replicas of free A-excitons in the 10 K PL spectrum.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Ping-Yuan Lin, Jyh-Rong Gong, Ping-Cheng Li, Tai-Yuan Lin, Dong-Yuan Lyu, Der-Yuh Lin, Hung-Ji Lin, Ta-Ching Li, Kuo-Jen Chang, Wen-Jen Lin,