Effects of LaNiO3 buffer layer on the structures and properties of La0.7Sr0.3MnO3 thin films

The chemical solution deposition method as a useful method for preparation of oxide films was used to fabricate La0.7Sr0.3MnO3 films on Si (1 0 0) substrates with a LaNiO3 buffer layer. The XRD results of La0.7Sr0.3MnO3/LaNiO3/Si and La0.7Sr0.3MnO3/Si films showed that the LaNiO3 buffer layer is beneficial for the crystallization of the La0.7Sr0.3MnO3 films. Moreover, the resistivity was largely decreased and the insulator–metal transition temperature was increased. Additionally, the MR was changed due to the existence of the LaNiO3 buffer layer.