| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1794542 | Journal of Crystal Growth | 2008 | 5 Pages |
Abstract
GaSb/AlGaSb multi-quantum well (MQW) structures with an AlSb initiation layer and a relatively thick GaSb buffer layer grown on Si (0 0 1) substrates were prepared by molecular beam epitaxy (MBE). Transmission electron microscopy (TEM) images and high-resolution X-ray diffraction (XRD) patterns indicated definite MQW structures. The photoluminescence (PL) emission around 1.55 μm wavelength was observed for 10.34 nm GaSb/30 nm Al0.6Ga0.4Sb MQW structure at room temperature. Dependence of PL emission energy on GaSb well width was well explained by finite square well potential model.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Hideyuki Toyota, Tomonori Sasaki, Yoshio Jinbo, Naotaka Uchitomi,