Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1794575 | Journal of Crystal Growth | 2009 | 4 Pages |
Abstract
A study of the epitaxial growth of InP on SrTiO3(0 0 1) (STO) substrates is presented. Reflection high energy electron diffraction (RHEED) and X-ray diffraction experiments evidence the strong influence of STO surface reconstruction on the InP crystalline orientation. When grown on unreconstructed (0 0 1) STO surfaces, the InP lattice has its [1 1 1] direction perpendicular to the growth plane. When grown on (2×1) reconstructed STO surfaces, InP is (0 0 1) oriented on the (0 0 1) STO substrate. In both cases, at least one [1 1 0] InP in-plane direction is aligned to one of the [1 0 0] STO direction.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
J. Cheng, P. Regreny, L. Largeau, G. Patriarche, O. Mauguin, K. Naji, G. Hollinger, G. Saint-Girons,