Article ID Journal Published Year Pages File Type
1794585 Journal of Crystal Growth 2009 6 Pages PDF
Abstract

We report on properties of low-temperature (LT) ZnO films grown by the atomic layer deposition method with diethylzinc (DEZn) precursor. It is shown that the ZnO thin film crystallographic orientation, quality of the surface, and optical properties depend on the main growth parameters like temperature, pulsing, and purging time and thus can be varied in controllable manner. All the presented results were obtained for ZnO layers grown at temperature between 90 and 200 °C.

Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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