Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1794585 | Journal of Crystal Growth | 2009 | 6 Pages |
Abstract
We report on properties of low-temperature (LT) ZnO films grown by the atomic layer deposition method with diethylzinc (DEZn) precursor. It is shown that the ZnO thin film crystallographic orientation, quality of the surface, and optical properties depend on the main growth parameters like temperature, pulsing, and purging time and thus can be varied in controllable manner. All the presented results were obtained for ZnO layers grown at temperature between 90 and 200 °C.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
I.A. Kowalik, E. Guziewicz, K. Kopalko, S. Yatsunenko, A. Wójcik-Głodowska, M. Godlewski, P. Dłużewski, E. Łusakowska, W. Paszkowicz,