Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1794627 | Journal of Crystal Growth | 2008 | 6 Pages |
Abstract
Circular pillar structures of various diameters have been prepared by a focused ion beam (FIB) through a 4-μm-thick epitaxial gallium nitride (GaN) film grown on a sapphire substrate. Micro-Raman scattering is used to measure residual stresses based on the shift of an E2 phonon in the GaN film. Measurements of residual stress profiles are compared to Winkler's elastic formalism for a shear-supported film with proper boundary conditions. The model, optimized at a cleave edge, is compared to the experimental shape of stress variations inside and outside the pillar structures.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Samuel H. Margueron, Patrice Bourson, Simon Gautier, Ali Soltani, David Troadec, Jean-Claude De Jaeger, Andrei A. Sirenko, Abdallah Ougazzaden,