Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1794657 | Journal of Crystal Growth | 2009 | 4 Pages |
Abstract
We have successfully grown bulk, single crystals of AlxGa1−xN with the Al content x ranging from 0.5 to 0.9. Samples were grown from Ga melt under high nitrogen pressure (up to 10 kbar) and at high temperature (up to 1800 °C) using a gas pressure system. The homogeneity and Al content of the crystals were investigated by X-ray diffraction and laser ablation mass spectrometry. On the basis of the high-pressure experiments, the corresponding pressure–temperature (p–T) phase diagram of Al–Ga–N was derived. The bandgap of the material was determined by the femtosecond two-photon absorption autocorrelation method and is equal to 5.81±0.01 eV for the Al0.86Ga0.14N crystals.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A. Belousov, S. Katrych, J. Jun, J. Zhang, D. Günther, Roman Sobolewski, J. Karpinski, B. Batlogg,