Optimizing the growth of CoSi2 film with oxide-mediated CoSi2 template by silicon cap layer

Applying both template and Si cap technology, we achieved the epitaxial growth of CoSi2 directly on Si(1 0 0) substrate by rapid thermal annealing (RTA). The crystal quality of CoSi2 film is found to be significantly dependent on the Si cap thickness. In our work, a good-quality CoSi2 film with a minimum of χmin~11.6% and 3.3 Ω/square was obtained as a 15 nm Co with a subsequent 15 nm Si cap layer is deposited on an oxide-mediated CoSi2 template and followed by an anneal at 1050 °C under N2 protection; whereas too thin or thick Si cap layer will deteriorate the crystalline quality of CoSi2. These experimental results are discussed in combination with the simulation of Rutherford backscattering spectroscopy and X-ray reflectivity.