| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1794691 | Journal of Crystal Growth | 2007 | 5 Pages |
Abstract
The thermal stability of the oxygen precipitates in Czochralski silicon (Cz-Si) crystal with germanium doping has been investigated with rapid thermal annealing. It was found that the grown-in oxygen precipitates could be dissolved easily in germanium-doped Cz-Si (GCz-Si) than in conventional Cz-Si. After prolonged high-temperature thermal cycle, it was found that the germanium doping inclined to dramatically reduce the thermal stability of oxygen precipitates in Cz-Si crystal, either generated at low temperature (800 °C) or formed at high temperature (1000 °C). It is proposed that the germanium doping in Cz-Si could result in the oxygen precipitates with small size and plate shape, which reduce their thermal stability.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jiahe Chen, Deren Yang, Xiangyang Ma, Hong Li, Liming Fu, Ming Li, Duanlin Que,