| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1794712 | Journal of Crystal Growth | 2007 | 6 Pages |
Abstract
Zn0.3In1.4Sn0.3O3−δ (ZITO) thin films were grown by computer-controlled pulsed laser deposition (PLD) on (0 0 0 1) Al2O3 substrate. Cross-section and plan-view transmission electron microscopy (TEM) revealed that the ZITO films were composed of twin-related domains with their (2 2 2) planes parallel to (0 0 0 1) planes of the Al2O3 substrate. ZITO {55¯0} planes fitted well to Al2O3{33¯00} planes with a lattice mismatch of approximately 2.8%. Remarkable enhancement of electrical conductivity, about one order of magnitude higher than that of bulk ZITO, was found. The formation of twin-related domains and its effects on electrical and optical properties of ZITO films were also discussed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
M. Zhang, D.B. Buchholz, S.J. Xie, R.P.H. Chang,